Hybrid superconducting-ferroelectric quantum memristor
Maria A. Badarne, Emanuele G. Dalla Torre, Yachin Ivry
DOI 10.1103/4746-w9cm · Physical Review Research
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Abstract
The nontrivial integration of qubits with classical computing systems and the lack of quantum-memory devices remain a key obstacle in the development of quantum technologies. Here, we present a theoretical platform for hybrid quantum devices with memory characteristics. In these current-driven hybrid memristors, a ferroelectric layer serves as the tunneling barrier in a superconducting Josephson junction; thus, the potential barrier is history-dependent. A memory-integrated phase qubit and a Lagrangian description of the superconducting circuit are also presented, paving the way to highly functional, self-modulated Josephson-junction technologies.
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