Transport and Noise Properties of sub-100-nm Planar Nb Josephson Junctions with Metallic Hf-Ti Barriers for nano-SQUID Applications
V. Morosh, J. Linek, B. Müller, M.J. Martínez-Pérez, S. Wolter, T. Weimann, J. Beyer, T. Schurig, O. Kieler, A.B. Zorin, R. Kleiner, D. Koelle
DOI 10.1103/PhysRevApplied.14.054072 · Physical Review Applied
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Abstract
We analyze electric transport and noise properties at 4.2 K of self-shunted superconductor-normal metal-superconductor (SNS) sandwich-type Josephson junctions, comprising Nb as the superconductor and Hf-Ti as the normal conducting material, with lateral dimensions down to approximately 80 nm. The junctions are fabricated with an optimized multilayer Nb technology based on nanopatterning by electron-beam lithography and chemical-mechanical polishing. The dependence of transport properties on the junction geometry (lateral size and barrier thickness dHf−Ti) is studied, yielding a characteristic voltage Vc up to approximately 100μV for the smallest dHf−Ti=17 nm. The observed small hysteresis in the current-voltage curves of devices with high Vc and large size can be attributed to self-heating of the junctions and fitted with an extended version of the resistively shunted junction model. Measurements of voltage noise of single junctions are consistent with the model including self-heating effects. The potential of our technology for further miniaturization of nanoscale superconducting quantum interference devices and for the improvement of their performance is discussed.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 9.2 | Pressure unresolved | onset |
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