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Superconducting Microstrip Losses at Microwave and Submillimeter Wavelengths

S. Hähnle, K. Kouwenhoven, B. Buijtendorp, A. Endo, K. Karatsu, D.J. Thoen, V. Murugesan, J.J.A. Baselmans

DOI 10.1103/PhysRevApplied.16.014019 · Physical Review Applied

T1

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Abstract

We present a lab-on-chip experiment to accurately measure losses of superconducting microstrip lines at microwave and submillimeter wavelengths. The microstrips are fabricated from Nb−Ti−N, which is deposited using reactive magnetron sputtering, and amorphous silicon which is deposited using plasma-enhanced chemical vapor deposition (PECVD). Submillimeter wave losses are measured using on-chip Fabry-Perot resonators (FPRs) operating around 350 GHz. Microwave losses are measured using shunted half-wave resonators with an identical geometry and fabricated on the same chip. We measure a loss tangent of the amorphous silicon at single-photon energies of tanδ=3.7±0.5×10−5 at approximately 6GHz and tanδ=2.1±0.1×10−4 at 350 GHz. These results represent very low losses for deposited dielectrics, but the submillimeter wave losses are significantly higher than the microwave losses, which cannot be understood using the standard two-level system loss model.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
NbTiN

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15.1Pressure not reportedunknown
NbTiN

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15Pressure not reportedunknown
Al

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1.25Pressure not reportedunknown
Ta

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0.7Pressure not reportedunknown

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