Sub-5-nm Monolayer Boron Pnictide MOSFETs for n- and p-Type High-Performance Applications

Abstract

Channel materials with symmetrical performances for n- and p-type transistors and shrinking transistors to the ultrascale limit are essential for CMOS integrated circuits (ICs) in the coming post-Si era. Monolayer (ML) boron pnictides (i.e., BP and BAs) possess both high electron and hole mobilities and flat atomic thick configurations, which are beneficial for symmetrical performance and short natural lengths, respectively. Herein, we provide a theoretical study on the device performances of sub-5-nm ML boron pnictide MOSFETs using the ab initio quantum transport method. Symmetrical n- and p-type performances are achieved for the ML boron pnictide MOSFETs. The optimal n- and p-type ML BP and BAs MOSFETs can reach the International Roadmap for Devices and Systems goals for the 2028 horizon for high-performance devices at gate lengths (Lg) of 3 and 5 nm, respectively. In particular, the optimal n-type (p-type) ML BP MOSFETs possess superhigh on-state currents (ION) of 2974 (2937) µA/µm at Lg= 5 nm, exceeding most reported ML MOSFETs. Our study suggests that ML boron pnictides are prospective channel materials in the post-Si era for CMOS ICs.

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