Superconductor-semiconductor-superconductor lateral heterojunction diodes based on MSi2N4 (M = Ta,Mo, W) monolayers
Xiaozheng Fan, Ruqian Wu, Chunlan Ma, Shijing Gong, Chuanxi Zhao, Tianxing Wang, Xiao Dong, Shaoqian Yin, Yipeng An
DOI 10.1103/PhysRevApplied.23.034082 · Physical Review Applied
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Abstract
Heterojunctions of two-dimensional (2D) materials have generated substantial research interest due to their diverse and novel properties. In this study, we propose a class of superconductor-semiconductor-superconductor (SSS) lateral heterojunction diodes based on MSi2N4 (M = Ta,Mo, W) monolayers. Using the ab initio method, we simulate the time- and angle-resolved photoelectron spectroscopy (Tr-ARPES) for all MSi2N4 monolayers and, importantly, reveal the one-band and two-gap s-wave superconductivities in TaSi2N4. Furthermore, these SSS diodes exhibit a significant and tunable negative differential resistance (NDR) effect. Our findings suggest that MSi2N4 monolayers are promising platforms for studying superconducting materials and NDR-based nanodevices, further broadening the potential applications of the MA2Z4 family of materials in nanoelectronics.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| TaSi2N4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 7.5 | Pressure not reported | onset |
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