Tuning the Terahertz Emission Power of an Intrinsic Josephson-Junction Stack with a Focused Laser Beam
X. J. Zhou, J. Yuan, H. Wu, Z. S. Gao, M. Ji, D. Y. An, Y. Huang, F. Rudau, R. Wieland, B. Gross, N. Kinev, J. Li, A. Ishii, T. Hatano, V. P. Koshelets, D. Koelle, R. Kleiner, H. B. Wang, P. H. Wu
DOI 10.1103/PhysRevApplied.3.044012 · Physical Review Applied
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Abstract
We report on tuning the THz emission of a Bi2Sr2CaCu2O8 (BSCCO) intrinsic Josephson-junction stack by a focused laser beam which is scanned across the stack. The emission power Pe increases by up to 75% upon laser irradiation for a bath temperature near 22 K. The laser-induced changes in the voltage Vdc across the stack and in the emission power are measured simultaneously. The maximum of the laser-induced changes in emission power ΔPe is achieved by irradiating the stack on the location where the local temperature is about the critical temperature Tc. However, ΔPe is found to be proportional to the laser-induced global voltage change ΔVdc, irrespective of the laser position. This unexpected global response is likely to be related to a change in the average stack temperature and is consistent with the change in Pe when increasing the bath temperature by about 0.2 K. This tuning method can be employed in the application of BSCCO THz sources.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Bi2Sr2CaCu2O8 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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