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Two-gap superconductivity and topological surface states in TaOsSi

C. Q. Xu, B. Li, J. J. Feng, W. H. Jiao, Y. K. Li, S. W. Liu, Y. X. Zhou, R. Sankar, Nikolai D. Zhigadlo, H. B. Wang, Z. D. Han, B. Qian, W. Ye, W. Zhou, T. Shiroka, Pabitra K. Biswas, Xiaofeng Xu, Z. X. Shi

DOI 10.1103/PhysRevB.100.134503 · Physical Review B

T1

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Abstract

The occurrence of superconductivity in topological materials is considered as a promising route for realizing topological superconductors, a platform able to host the long-sought Majorana fermions in condensed matter. In this work, by using electrical transport and heat-capacity measurements, as well as first-principles band-structure calculations, we investigate the physical properties of TaOsSi, a superconductor with Tc≈5.8 K. The behavior of both its upper critical field and low-temperature heat-capacity suggest the existence of two superconducting gaps. More strikingly, first-principles calculations reveal gapless topological surface states in the present material. The evolution of the electrical resistivity with pressure (up to 50 GPa) was also investigated, and a “V-shaped” diagram of Tc vs P was found. Overall, our data suggest that TaOsSi is a new system where multiband superconductivity and topological surface states coexist and, hence, it may serve as a possible candidate in the search for topological superconductivity.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
TaOsSi

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5.8Pressure unresolvedonset
TaOsSi

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

5.8Pressure unresolvedonset
TaOsSi

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5.8Pressure unresolvedonset
NbOsSi

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3.5Pressure not reportedunknown

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