Superconducting proximity effect in a NbSe2/graphene van der Waals junction
Rai Moriya, Naoto Yabuki, Tomoki Machida
DOI 10.1103/PhysRevB.101.054503 · Physical Review B
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Abstract
We investigate the transport properties of the van der Waals (vdW) junction between a layered superconductor NbSe2 and a graphene. A superconductor/graphene (S/G) vdW junction is fabricated by dry transferring a freshly exfoliated NbSe2 flake onto a graphene surface. This vdW junction provides a transparent superconductor/graphene contact as well as metal-induced doping in the graphene layer underneath, thereby facilitating vdW coupling-induced superconductivity in the graphene under the NbSe2 layer. The NbSe2/superconducting graphene (Sc-graphene)/graphene structure causes the differential resistance of the vdW junction to exhibit zero-bias dip and multiple peaks at larger bias. All of these features are explained by the coexistence of two different S/G interfaces in the device; these are lateral Sc-graphene/graphene and vertical NbSe2/Sc-graphene. A proximity-induced superconducting gap Δi in the Sc-graphene is detected by Andreev reflection at the lateral Sc-graphene/graphene junction and the determined Δi=0.05−0.06meV.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| NbSe2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 7 | Pressure not reported | onset |
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