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Planar Hall effect in the quasi-one-dimensional topological superconductor TaSe3

X. C. Yang, X. Luo, J. J. Gao, Z. Z. Jiang, W. Wang, T. Y. Wang, J. G. Si, C. Y. Xi, W. H. Song, Y. P. Sun

DOI 10.1103/PhysRevB.104.155106 · Physical Review B

T1

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Abstract

A novel planar Hall effect (PHE) is induced by the chiral anomaly or nontrivial Berry curvature, which has been predicted in nonmagnetic Weyl/Dirac semimetals. Recent theories suggest such an effect exists in three-dimensional (3D) topological insulators even in the absence of chiral anomaly. In this paper, we present a detailed analysis of the transport properties in the quasi-1D TaSe3, a candidate of topological superconductor (TSC) predicted by the theorist. There are some interesting observations on TaSe3. (1) The electron-hole compensation has been confirmed by the Hall effect measurements around Tcom∼30K, which accounts for the extremely large magnetoresistance in TaSe3. (2) The remarkable PHE and anisotropic magnetoresistance (AMR) are observed in TaSe3. Based on the detailed analysis of the PHE and AMR curves, the origin of PHE in TaSe3 is suggested to originate from the resistivity anisotropy induced by the difference of field-induced anisotropic scattering in surface Dirac fermions of various spins. (3) We observed the successive Fermi surface reconstruction induced by the temperature around T*∼50K, where the amplitude of intrinsic PHE drops sharply related to the suppression of the topological surface state. Meanwhile, the dρxx(T)/dT curve presents a broad anomaly around Tpeak∼70K, which can be explained as a possible charge-density wave associated with imperfect Fermi surface nesting. PHE provides an effective method to understand the relationship between the electronic transport properties and the topological structure in quasi-1D TSC TaSe3.

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FormulaReported Tc (K)Pressure (GPa)Type
TaSe3

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2Pressure not reportedunknown

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