Superconductivity in a two monolayer thick indium film on Si(111)3×3-B

Abstract

Two-monolayer-thick In film with a √7×√3-rect structure is known to show superconductivity at 3.18 K on the Si(111)7×7 substrate. We synthesized the √7×√3-In-rect film on the Si(111)√3×√3−B substrate and found that it also became a superconductor at Tc = 2.38 K. The In film on the √3−B substrate showed the two-dimensional free-electron-like circular Fermi surface as on the 7×7 substrate. However, the butterfly-wing-like shape contour at the Fermi surface was found to be shifted and enlarged on the √3−B substrate. Density functional calculations revealed that it was caused by the difference of the substrate. Tc on the √3−B substrate was considered to be identical to that on the 7×7 substrate in consideration of the recently reported surface defect density dependence of Tc. These results indicated that the interaction with the substrate does not play a crucial role in the superconductivity of the two-monolayer-thick In film.

Source-reported materials — not catalogue approval

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