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Near-surface InAs two-dimensional electron gas on a GaAs substrate: Characterization and superconducting proximity effect

Máté Sütő, Tamás Prok, Péter Makk, Magdhi Kirti, Giorgio Biasiol, Szabolcs Csonka, Endre Tóvári

DOI 10.1103/PhysRevB.106.235404 · Physical Review B

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Abstract

We have studied a near-surface two-dimensional electron gas based on an InAs quantum well on a GaAs substrate. In devices without a dielectric layer we estimated large electron mobilities on the order of 105cm2/Vs. We have observed quantized conductance in a quantum point contact, and determined the g factor. Using samples with an epitaxial Al layer, we defined multiple Josephson junctions and found the critical current to be gate tunable. Based on multiple Andreev reflections the semiconductor-superconductor interface is transparent, with an induced gap of 125μeV. Our results suggest that this InAs system is a viable platform for use in hybrid topological superconductor devices.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
InAs

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—Pressure not reportedunknown
Al

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown

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