In situ tuning of dynamical Coulomb blockade on Andreev bound states in hybrid nanowire devices
Shan Zhang, Zhichuan Wang, Dong Pan, Zhaoyu Wang, Zonglin Li, Zitong Zhang, Yichun Gao, Zhan Cao, Gu Zhang, Lei Liu, Lianjun Wen, Ran Zhuo, Dong E. Liu, Ke He, Runan Shang, Jianhua Zhao, Hao Zhang
DOI 10.1103/PhysRevB.108.235416 · Physical Review B
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Abstract
Electron interactions in quantum devices can exhibit intriguing phenomena. One example is assembling an electronic device in series with an on-chip resistor. The quantum laws of electricity of the device are modified at low energies and temperatures by dissipative interactions induced by the resistor, a phenomenon known as the dynamical Coulomb blockade (DCB). The DCB strength is usually nonadjustable in a fixed environment defined by the resistor. Here, we design an on-chip circuit for InAs-Al hybrid nanowires where the DCB strength can be gate-tuned in situ. InAs-Al nanowires could host Andreev or Majorana zero-energy states. This technique enables tracking the evolution of the same state while tuning the DCB strength from weak to strong. We observe the transition from a zero-bias conductance peak to split peaks for Andreev zero-energy states. Our technique opens the door to in situ tuning interaction strength on zero-energy states.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| InAs-Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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