Fabry-Perot superconducting diode

Xian-Peng Zhang

doi:10.1103/PhysRevB.109.184513

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Fabry-Perot superconducting diode

Xian-Peng Zhang

DOI 10.1103/PhysRevB.109.184513 · Physical Review B

T1

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Abstract

Superconducting diode effects (SDEs) occur in systems with asymmetric critical supercurrents |I+c|≠|I−c| yielding dissipationless flow in one direction (e.g., +), while dissipative transport in the opposite direction (−). Here we investigate the SDE in a phase-biased ϕ Josephson junction with a double-barrier resonant-tunneling InAs nanowire nested between proximitized InAs/Al leads with finite momentum ℏq Cooper pairing. Within the Bogoliubov-de Gennes (BdG) approach, we obtain the exact BCS ground state energy EG(q,ϕ) and I+c≠|I−c| from the current-phase relation IG(q,ϕ)∼∂ϕEG(q,ϕ). The SDE arises from the accrued Andreev phase shifts δϕL,R(q,ϕ) leading to asymmetric BdG spectra for q≠0. Remarkably, the diode efficiency γ=(I+c−|I−c|)/(I+c+|I−c|) shows multiple Fabry-Perot resonances γ≃26% at the double-barrier Andreev bound states as the well depth Vg is varied. Our γ also features sign reversals for increasing q and high sensitiveness to fermion-parity transitions. The latter enables I+c(ϕ+)⇄I−c(ϕ−) switchings over narrow phase windows, i.e., ϕ+,ϕ−∈Δϕ≪π, possibly relevant for future superconducting electronics.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
InAs/Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown