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Competitive multiple phase transitions and distinct superconducting states in a Re3Ge7 single crystal under hydrostatic pressure

Chenglin Li, BinBin Ruan, Qingxin Dong, Pengtao Yang, Guorui Xiao, Tong Shi, Zhaoming Tian, Jianping Sun, Yoshiya Uwatoko, Genfu Chen, Zhi Ren, Gang Wang, Zhian Ren, Bosen Wang, Jinguang Cheng

DOI 10.1103/PhysRevB.110.184507 · Physical Review B

T1

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Abstract

We report the growth and physical properties of high-quality needle-shaped Re3Ge7 single crystal with various characterizations. It exhibits a gapped metal-insulator (MI)-like phase transition with evident Shubnikov–de Haas oscillation of low-T electrical resistivity. The superconducting phase diagram was revisited by measuring the electrical resistivity in a cubic anvil cell (CAC) under various hydrostatic pressures up to 12 GPa. Unlike the results of single crystals in a diamond anvil cell (DAC) and polycrystalline in CAC, the gapped MI-like phase transition of single-crystal Re3Ge7 evolves into three charge density wave (CDW)-like ones, which are reduced gradually by applied pressure and then collapse at several critical pressures; approaching the CDW-like quantum criticality, two distinct superconducting phases emerge and transit from one to another in a narrow pressure range; the significant increase in superconducting width indicates their strong competition. By combining density functional theory calculations, the origin of the melting MI-like transition caused by pressure and Ga doping, as well as the competitive CDW-like phase transitions and distinct superconductivity, are discussed.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Re3Ge7

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5.912.2 GPaunknown
Re3Ge7-xGax

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

3.37Pressure unresolvedunknown

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