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Superconductivity in three-dimensional interacting doped topological insulators

András L. Szabó, Bitan Roy

DOI 10.1103/PhysRevB.110.L201301 · Physical Review B

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Abstract

Three-dimensional doped Dirac insulators foster simply connected (in both topological and trivial regimes) and annular (deep inside the topological regime) Fermi surfaces (FSs) in the normal state, and allow on-site repulsions among fermions with opposite spin (U1) and parity (U2) eigenvalues. From an unbiased leading-order (one-loop) renormalization group analysis, controlled by a suitable ε expansion, we show that this system develops a strong propensity toward the nucleation of scalar s-wave and odd-parity pseudoscalar p-wave pairings, favored by repulsive U1 and U2 interactions, respectively, irrespective of the underlying FS topology. Our results can be pertinent for the observed superconductivity in various doped narrow gap semiconductors, and the theoretical foundation can readily be applied to investigate similar phenomenon in various doped topological materials.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
(Cu/Nd/Sr)xBi2Se3

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—Pressure not reportedunknown
Sn1-xInxTe

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown

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