Pressure-induced superconducting and structural properties of noncentrosymmetric LaPtGe
Sathiskumar Mariappan, Dilip Bhoi, Boby Joseph, R. P. Singh, Govindaraj Lingannan, R. K. Kushwaha, P. K. Meena, Arumugam Sonachalam, Yoshiya Uwatoko
DOI 10.1103/PhysRevB.111.144515 · Physical Review B
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Abstract
The compounds LaPt(Ge, Si) and LaNiSi are exciting platforms to investigate the possibility of topological superconductivity due to their noncentrosymmetric (NCS) crystal structure and the presence of nodal-line Weyl electronic dispersion. Here, we investigate the effect of pressure on the superconducting and structural properties of LaPtGe through resistivity and x-ray-diffraction (XRD) studies. Our findings reveal a two-step increase of superconducting transition temperature (Tc) from 3.06 K (0 GPa) to 3.94 K (6 GPa), with the rate of 0.071 K/GPa up to ∼3 GPa, and beyond that, it increases to a 2.5 times higher rate of 0.183 K/GPa up to 6 GPa. High-pressure XRD confirms the structural stability up to 7.82 GPa, though a change in lattice compression behavior is observed. The two distinct compressions of unit-cell parameters are observed with the bulk modulus of ∼144 GPa (below 3 GPa) and ∼162 GPa (above 3 GPa), derived using the Birch-Murnaghan equation of state. Magnetotransport studies up to 2.45 GPa show an increase in the upper critical field [Hc2(0)] from 0.7 to 0.92 T, with a positive curvature of Hc2(T), suggesting the possibility of multigap superconductivity in LaPtGe, similar to LaPtSi. Further, it indicates that the lattice compression effects primarily drive the enhancement of Tc, and it may be due to the modifications in the density of states at the Fermi level. Our results provide insights into pressure-tuned superconductivity mechanisms in NCS compounds.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| LaPtGe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3.06 | Pressure unresolved | onset |
| LaPtGe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3.94 | 6 GPa | onset |
| LaPtSi Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
| LaNiSi Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
| CaPtAs Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
| LaAlSi Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
| LaAlGe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
| Re6Hf Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
| Re5.5Ta Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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