Electronic phase transition and partially gapped Fermi surface in superconducting Lu5Ir4Si10
R. N. Shelton, L. S. Hausermann-Berg, P. Klavins, H. D. Yang, M. S. Anderson, C. A. Swenson
DOI 10.1103/PhysRevB.34.4590 · Physical Review B
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Abstract
The enhancement of the superconducting transition temperature of Lu5Ir4Si10 from 3.8 to 9.1 K under pressure is caused by the suppression of an electronic phase transition which results in the partial gapping of the Fermi surface. Using electrical resistivity at ambient and high pressure, bulk-modulus, heat-capacity, upper-critical-magnetic-field, and static-magnetic-susceptibility measurements, we estimate that the density of electronic states at the Fermi level is reduced by 36% due to this phase transition. The transition, which occurs at 79 K at ambient pressure, has the experimental characteristics indicative of charge- or spin-density-wave formation.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Lu5Ir4Si10 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3.8 | Pressure unresolved | unknown |
| Lu5Ir4Si10 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 9.1 | 2.1 GPa | unknown |
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