Magnetic field dependence of the critical superconducting current induced by the proximity effect in silicon

T. Nishino; U. Kawabe; E. Yamada

doi:10.1103/PhysRevB.34.4857

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Magnetic field dependence of the critical superconducting current induced by the proximity effect in silicon

T. Nishino, U. Kawabe, E. Yamada

DOI 10.1103/PhysRevB.34.4857 · Physical Review B

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Abstract

The magnetic field dependence of the critical superconducting current induced by the proximity effect in heavily boron-doped Si is studied experimentally. It is found that the critical current flowing through the p-type-Si-coupled junction decreases with increasing applied magnetic field. The critical current can be expressed as the product of three factors: the current induced by de Gennes's proximity effect, the exponential decrease due to pair breaking by the magnetic field, and the usual diffraction-pattern-like dependence on the magnetic field due to the Josephson effect. The second factor depends on the carrier concentration in the semiconductor. The local critical current shows a rapid decrease at the edge of the electrodes.