Interface formation of semiconductors with high-Tc superconductors: Ge/La1.85Sr0.15CuO4
Y. Gao, T. J. Wagener, J. H. Weaver, D. W. Capone, II
DOI 10.1103/PhysRevB.37.515 · Physical Review B
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Abstract
Inverse photoemission has been used to probe the microscopic evolution of the semiconductor/superconductor interface Ge/La1.85Sr0.15CuO4. We find little or no reaction until the Ge coverage reaches 1 Å and that the reaction is quickly saturated when the nominal coverage reaches Å6 Å. The reaction is characterized by the reduction of the Cu 3d−O 2p antibonding electronic states straddling the Fermi level and the shift of La 4f and 5d empty-state features toward EF. Large apparent electron mean free paths deduced from the attenuation of La peaks suggest cluster and island formation in the Ge/La1.85Sr0.15CuO4 interface.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| La1.85Sr0.15CuO4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 35 | Pressure not reported | unknown |
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