Superconducting properties of VNx sputtered films including spin fluctuations and radiation damage of stoichiometric VN
K. E. Gray, R. T. Kampwirth, D. W. Capone, II, R. Vaglio, J. Zasadzinski
DOI 10.1103/PhysRevB.38.2333 · Physical Review B
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Abstract
We have made well-ordered, stoichiometric films of VN using reactive sputtering and studied the effects of disordering due to deviations from stoichiometry and radiation damage. An unexpected local minimum of Tc for the well-ordered, stoichiometric VN was found. The principal result was that the peak in Tc for substoichiometric VN0.96 can be shown to be consistent with a competition between spin fluctuations and electron–phonon coupling, but we find the effect of the former is smaller than previously predicted. The superconducting properties measured in radiation-damaged VN have been extrapolated to pure, stoichiometric VN.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| VN Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 7.8 | Pressure not reported | unknown |
| VN0.96 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 8.9 | Pressure not reported | unknown |
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