Metal-insulator transition in amorphous Ga-Ar mixtures: Critical exponents of electrical transport parameters and behavior of superconductivity
Th. Zint, M. Rohde, H. Micklitz
DOI 10.1103/PhysRevB.41.4831 · Physical Review B
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Abstract
The experimentally determined critical exponents ν and g of electrical dc conductivity σ and Hall coefficient RH approaching the metal-insulator transition (MIT) from the metallic side in amorphous GaxAr1−x mixtures are ν=0.5±0.1 and g=0.03±0.05, respectively. These exponents are the same as those found in Si:P and Si:As. We thus conclude that the MIT in these systems belong to the same universality class. Furthermore, we find that the disappearance of superconductivity in these mixtures coincides with the MIT.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| GaxAr1-x Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 7.6 | Pressure not reported | unknown |
| Ga Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 7.6 | Pressure not reported | unknown |
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