Carrier reflection at the superconductor-semiconductor boundary observed using a coplanar-point-contact injector
Toshikazu Nishino, Mutsuko Hatano, Haruhiro Hasegawa, Tokuo Kure, Fumio Murai
DOI 10.1103/PhysRevB.41.7274 · Physical Review B
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Abstract
The Andreev reflection of carriers at the boundary between a superconductor and a semiconductor has been studied buy measurement of the differential resistance of a n-type-Si–Nb point contact with a coplanar structure. The boundary condition of the pair potential in the Si-Nb proximity system is obtained from these measurements. A carrier-concentration dependence of the pair potential at the boundary is observed. The pair potential in the Si at the boundary increases with increasing carrier concentration.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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