Electronic states in oxide superconductors
H. Matsumoto, M. Sasaki, M. Tachiki
DOI 10.1103/PhysRevB.43.10264 · Physical Review B
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Abstract
Electronic states near the metal-insulator transition in oxide superconductors are studied in the p-d mixing model by use of the Green’s-function method. Due to spin and charge fluctuations induced in the p-d hopping, electronic states near the Fermi level are strongly renormalized and show anomalous behavior in the insulator-to-metal transition; that is, the occupied p band has a tail structure at the top of the band and with hole doping, an additional narrow band develops at the Fermi level inside the charge-transfer gap, splitting from the main p band. The main p band gradually approaches the Fermi level with hole doping. The results seem to explain qualitative behaviors of experiments in photoemission and optical conductivity.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Bi2Ca1Cu2O8 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
| TlBa2Cu2O7 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
| Tl2Ba2Ca1Cu2O8 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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