Effect of hopping between oxygen atoms on the metal-insulator transition in CuO2 planes of high-Tc superconductors
Weiyi Zhang, M. Avignon, K. H. Bennemann
DOI 10.1103/PhysRevB.43.11426 · Physical Review B
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Abstract
Using the slave-boson technique developed by Kotliar and Ruckenstein, we studied the metal-insulator transition in the antiferromagnetic ground state of high-Tc superconducting oxides. The Hubbard Hamiltonian used for the calculations includes hopping between oxygen atoms as well as Cu-O hopping. It is shown that hopping between oxygen atoms is particularly important for this metal-insulator transition. In the absence of this hopping, the transition to the insulating phase occurs already for infinitesimally small on-site Coulomb repulsion. Results for the phase diagram in the (U,Δ) plane for three typical values of oxygen-oxygen hopping are given. Our results are compared with the ones obtained for the paramagnetic state. In agreement with experiment, we obtain a transition from an antiferromagnetic insulating state to a metallic state as function of doping.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| La2-xBaxCuO4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
| YBa2Cu3O6+x Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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