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Variation of Tc and transport properties with carrier concentration in Y- and Pb-doped Bi-based superconductors

P. Mandal, A. Poddar, B. Ghosh, P. Choudhury

DOI 10.1103/PhysRevB.43.13102 · Physical Review B

T1

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Abstract

Electrical resistivity, magnetic susceptibility, and the Hall voltage of Bi2Sr2Ca1−xYxCu2O8+y (Bi 2:2:1:2) and (Bi1−xPbx)2Sr2Ca2Cu3O10+y (Bi 2:2:2:3) samples are measured as a function of temperature. A metal-insulator transition originating from the change of carrier concentration is found in the Bi 2:2:1:2 system at x≃0.55. Analysis of the electrical resistivity in the insulating region suggests that the transport is governed by a variable-range-hopping mechanism in the low-temperature region and phonon-assisted hopping of polarons in the high-temperature region. A universal dome-shaped Tc versus nH variation is observed in the Bi 2:2:1:2 and Bi 2:2:2:3 systems, which is similar to that reported in La2−xSrxCuO4 and YBa2Cu3O7−x systems. Various normal-state parameters, such as the effective mass of the carrier, Fermi energy, density of states at the Fermi level, and correlation energy, are calculated and compared to those reported in the literature.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Bi2Sr2Ca1-xYxCu2O8+y

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—Pressure not reportedunknown
(Bi1-xPbx)2Sr2Ca2Cu3O10+y

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown
La2-xSrxCuO4

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—Pressure not reportedunknown
YBa2Cu3O7-x

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—Pressure not reportedunknown
Tl2Ba2Ca2Cu3O10+y

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—Pressure not reportedunknown

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