Superconducting transition temperature in a Nb/NbxSi1−x bilayer system
Julia W. P. Hsu, Sung I. Park, G. Deutscher, Aharon Kapitulnik
DOI 10.1103/PhysRevB.43.2648 · Physical Review B
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Abstract
We investigated the effect of amorphous NbxSi1−x on the superconducting transition temperature (Tc) of two-dimensional single-crystal Nb films, as a function of thickness (dNb−Si) and of x varied across the metal-insulator transition (MIT), xc=11.5%. When dNb−Si≤100 Å, for insulating Nb-Si compositions, Tc as a function of dNb−Si displays an enhancement. We shall discuss this result in the framework of existing theories. When dNb−Si≥100 Å, Tc systematically decreases as the Nb-Si composition approaches the MIT from the insulating side. We can interpret this phenomenon, using the proximity-effect theory. No Tc enhancement at any thickness was observed for Nb-Si overlayers very close to the MIT or at the metallic side.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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