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Localization and interaction effects during superconductor-insulator transition of Bi2Sr2Ca1−xGdxCu2O8+d

B. Jayaram, P. C. Lanchester, M. T. Weller

DOI 10.1103/PhysRevB.43.5444 · Physical Review B

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Abstract

An extensive study has been made of the resistivity of superconducting and semiconducting samples of the Bi2Sr2Ca1−xGdxCu2O8+d system. The effect of changing the Gd concentration and the annealing conditions is found to be a gradual change in the normal-state resistivity measured at 280 K (ρn). With the increase in ρn, Tc is depressed. The form of the Tc depression is found to be consistent with a theory of localization and interaction effects on the superconductivity. In the insulator regime, however, the resistivity is due to variable-range hopping (VRH), the dimensionality of which changes from two to three as the ρn increases away from the superconductor-insulator boundary. The observation of the two-dimensional VRH behavior in juxtaposition with the superconductivity is in qualitative agreement with a theoretical model that considers the competition between superconductivity and localization in a disordered system. When ρn>1 Ω cm, the resistivity variation is found to be dominated by multiphonon-assisted hopping.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Bi2Sr2Ca1-xGdxCu2O8+d

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73Pressure not reportedunknown
Bi2Sr2Ca1-xGdxCu2O8+d

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81.3Pressure not reportedonset
Bi2Sr2Ca1-xGdxCu2O8+d

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

81.3Pressure not reportedonset

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