Critical sheet resistance observed in high-Tc oxide-superconductor Nd2−xCexCuO4 thin films
Satoshi Tanda, Minoru Honma, Tsuneyoshi Nakayama
DOI 10.1103/PhysRevB.43.8725 · Physical Review B
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Abstract
High-Tc oxide-superconductor Nd2−xCe3CuO4 single-crystal thin films were used to observe the critical sheet resistance at the insulator-superconductor transition. The films were epitaxially grown on SrTiO3(100) by the method of molecular-beam epitaxy. The electron transport properties of these films are drastically influenced by oxygen-impurity concentration and show clearly the evidence of Anderson localization attributed to two dimensionality. It is found that the critical sheet resistance R□ at the onset of superconductivity takes a value within a range from 6 to 8 kΩ, which is close to the value h/4e2=6.45 kΩ. Our results provide clear evidence that Anderson localization induces the universal behavior observed at the supercondutor-insulator transition.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Nd2-xCexCuO4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | onset |
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