Electronic and structural effects of oxygen doping in Bi2Sr2CaCu2Ox superconductors characterized by tunneling microscopy

Xian Liang Wu; Yue Li Wang; Zhe Zhang; Charles M. Lieber

doi:10.1103/PhysRevB.43.8729

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Electronic and structural effects of oxygen doping in Bi2Sr2CaCu2Ox superconductors characterized by tunneling microscopy

Xian Liang Wu, Yue Li Wang, Zhe Zhang, Charles M. Lieber

DOI 10.1103/PhysRevB.43.8729 · Physical Review B

T1

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Abstract

Scanning tunneling microscopy has been used to characterize the electronic and structural effects of oxygen doping in Bi2Sr2CaCu2Ox materials. Bias-voltage-dependent images of oxygen-deficient nonsuperconducting crystals show that reversible oxygen loss leads to nonperiodic variations in the electronic states near the Fermi level (±300 mV). Variations in the electronic states near the Fermi level are not observed, however, in images of superconducting samples. In addition, high-resolution images of the BiO layer of oxygen-deficient samples do not exhibit vacancies or strongly perturbed sites, but rather appear similar to images of the BiO layer of superconducting crystals. These data indicate that suppression of Tc in Bi2Sr2CaCu2Ox may not be due to oxygen loss from the BiO layer.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Bi2Sr2CaCu2Ox Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	85	Pressure not reported	unknown
Bi2Sr2CaCu2Ox Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	60	Pressure not reported	unknown