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Antiferromagnetism in electron- and hole-doped high-Tc superconductors

Weiyi Zhang, K. H. Bennemann

DOI 10.1103/PhysRevB.45.12487 · Physical Review B

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Abstract

The dependence of antiferromagnetism on electron and hole doping is studied. We explain the experimentally observed different critical doping concentration for the destruction of antiferromagnetism. We obtain only for hole-doped systems a paramagnetic phase with local moments. Furthermore, we show that the effective mass in the hole-doped system is lighter than that in electron-doped system at large doping. These results are derived from an effective one-band Hubbard Hamiltonian which results from the perturbative mapping of the original two-band Hubbard Hamiltonian. The only parameters used for calculating the magnetic phase diagram are the parameters of the original two-band Hubbard Hamiltonian.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Nd2-xCexCuO4-y

Archive — visibility unverified

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22Pressure not reportedunknown
Pr2-xCexCuO4-y

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown
La2-xSrxCuO4-y

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown

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