Theoretical study of electric-field effects in high-Tc oxide superconductors using an ultrathin-metal-insulator superlattice model
Shigeki Sakai
DOI 10.1103/PhysRevB.47.9042 · Physical Review B
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Abstract
A theory is proposed for describing electric-field effects to a superlattice covered by an insulator and a gate electrode. The superlattice consists of alternately stacked metal and insulating layers. The carriers in the metal layers behave as two-dimensional free particles, and they can move by tunneling in the insulating layer between two adjacent metal layers. The field effects are induced by application of a voltage to the gate electrode. The model is applied to an example whose superlattice is an oxide superconductor, Bi2Sr2CaCu2O8. Numerical results exhibit the penetration of the electric field and potential into the superlattice, and the condition of the carrier depletion. The theory also predicts jumps of the capacitance of the diode as a function of the applied gate voltage.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Bi2Sr2CaCu2O8 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
| YBa2Cu3O Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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