Hysteretic Josephson-junction behavior and phase diffusion in Ba1−xKxBiO3 films
S. Martin, E. S. Hellman, A. Kussmaul, E. H. Hartford, Jr.
DOI 10.1103/PhysRevB.48.6626 · Physical Review B
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Abstract
In Ba1−xKxBiO3 multidomain films grown on LaAlO3 substrates we find evidence for hysteretic Josephson-junction behavior. The junctions exhibit critical currents of a few μA and a finite zero-bias resistance. The critical current and zero-bias resistance depend on temperature, and amplitude of external rf irradiation. Qualitative features of the measured I-V curves can be accounted for by a simple model based on junctions in series coupled by a shunt capacitance. Estimates of the junction parameters are obtained by quantitative comparison of the data with an extended model based on classical phase diffusion.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Ba1-xKxBiO3 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 12 | Pressure not reported | onset |
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