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Normal-state resistance fluctuations in high-Tc cuprate films

Li Liu, K. Zhang, H. M. Jaeger, D. B. Buchholz, R. P. H. Chang

DOI 10.1103/PhysRevB.49.3679 · Physical Review B

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Abstract

We have measured 1/f resistance fluctuations at room temperature in YBa2Cu3Ox films as a function of oxygen content, x. The films were single phase, c-axis oriented and grown by pulsed organometallic-beam epitaxy on LaAlO3 substrates. In contrast to the monotonic increase of the film resistance with decreasing x, the normalized noise power was found to exhibit a sharp minimum at x=6.5. We attribute this behavior to vacancy creation in the Cu-O chains and discuss a simple model based on parallel conduction paths through both chains and planes.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
YBa2Cu3Ox

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92Pressure not reportedmidpoint
YBa2Cu3O6.9

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93Pressure not reportedmidpoint
YBa2Cu3Ox

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55Pressure not reportedmidpoint
YBa2Cu3Ox

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27Pressure not reportedmidpoint
Tl2Ba2CaCu2O8

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—Pressure not reportedunknown

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