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Josephson-junction single plaquette as a model for the high-Tc grain-boundary junctions

Jinhee Kim, Hyun Joon Shin, Hu Jong Lee

DOI 10.1103/PhysRevB.49.6432 · Physical Review B

T1

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Abstract

We have calculated the widths of the integer and half-integer voltage steps in a square Josephson-junction single plaquette as a function of ac level for various filling factors f. The characteristic features of the step widths, corresponding to n=0, 1/2, and 1, show clear differences between small and large values of f, and are in reasonable agreement with the results observed experimentally in high-Tc single grain-boundary junctions. When the inhomogeneity in the critical current of the junctions parallel and perpendicular to the external current is introduced to the model the equations of motion for a single plaquette become equivalent to those of a dc superconducting quantum interference device in the limit of small loop inductance.

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FormulaReported Tc (K)Pressure (GPa)Type
YBa2Cu3O7-δ

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—Pressure not reportedunknown

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