Enhanced conductance near zero voltage bias in mesoscopic superconductor-semiconductor junctions

P. H. C. Magnée; N. van der Post; P. H. M. Kooistra; B. J. van Wees; T. M. Klapwijk

doi:10.1103/PhysRevB.50.4594

← Back to search

Enhanced conductance near zero voltage bias in mesoscopic superconductor-semiconductor junctions

P. H. C. Magnée, N. van der Post, P. H. M. Kooistra, B. J. van Wees, T. M. Klapwijk

DOI 10.1103/PhysRevB.50.4594 · Physical Review B

T1

Active bibliographic source — not scientific approval

Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.

Abstract

We have studied the conductance enhancement near zero voltage bias of double-barrier Nb-p++Si-E junctions, where we chose for the counterelectrode E either Nb, Al, or W. The experiments show a large correction, ΔG≊0.1GN, on the classical superconductor–insulator–normal-metal (SIN) conductance. We present measurements of the temperature, magnetic-field, and voltage dependence, and we interpret the observed results within the available theoretical models for coherent Andreev reflection, as provided by several authors.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	9.2	Pressure not reported	unknown
Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	1.18	Pressure not reported	unknown