Temperature dependence of even-odd electron-number effects in the single-electron transistor with a superconducting island
M. Tinkham, J. M. Hergenrother, J. G. Lu
DOI 10.1103/PhysRevB.51.12649 · Physical Review B
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Abstract
A simple quasiequilibrium model is presented that accounts in some detail for the observed temperature dependence of the crossover from 2e to e periodicity (vs gate charge) in the current through a single-electron tunneling transistor with a mesoscopic superconducting island.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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