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Disorder-induced covariation of the residual resistance ratio and superconducting Tc of amorphous Zr60Cu40

N. Karpe, M. Ahlgren, J. Bo/ttiger, N. G. Chechenin, J. P. Krog, A. Nordström, Ö. Rapp

DOI 10.1103/PhysRevB.51.625 · Physical Review B

T1

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Abstract

Melt-spun ribbons and thin films of amorphous Zr60Cu40 have been studied. Disorder was varied by neutron irradiation, Xe ion irradiation, and condensation on substrates at different temperatures. A correlation was found between the data for the superconducting Tc, and the residual resistance ratio, described by one curve for all samples. Increased electronic disorder was found to be the cause for this correlated depression of Tc and increasing residual resistance ratio. These results also give evidence for electronic disorder effects in the electrical resistivity of amorphous Zr60Cu40 up to room temperature.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Zr60Cu40

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

0.95Pressure not reportedmidpoint
Zr60Cu40

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

1.6Pressure not reportedmidpoint

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