Doping in isoelectronic cuprate superconductors
D. Goldschmidt, Y. Direktovitch, A. Knizhnik, Y. Eckstein
DOI 10.1103/PhysRevB.51.6739 · Physical Review B
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Abstract
Thermoelectric power in the charge-compensated 1:2:3 family (CaxLa1−x)(Ba1.75−xLa0.25+x)Cu3Oy shows that doping occurs also under isoelectronic (constant electron concentration) conditions obtained by keeping the oxygen content y constant. For all values of x and y there exists a single doping parameter y−yM−I(x), where yM−I is the value of y at the metal-insulator transition, suggesting that a single mobile band controls transport and superconductor properties. Isoelectronic doping occurs via capture of mobile electrons by lower-lying low-mobility states, requiring either a shift of the band relative to these states or transfer of spectral density near the Fermi energy.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| (CaxLa1-x)(Ba1.75-xLa0.25+x)Cu3Oy Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 81.5 | Pressure not reported | unknown |
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