Experimental determination of the quasiparticle decay length ξqp in a diffusive superconducting quantum well
P. H. C. Magnée, S. G. den Hartog, B. J. van Wees, T. M. Klapwijk, W. van de Graaf, G. Borghs
DOI 10.1103/PhysRevB.52.R11630 · Physical Review B
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Abstract
We have experimentally investigated the electronic transport properties of an AlSb/InAs/AlSb quantum well, where part of the AlSb top layer has been replaced with a superconducting Nb strip. By doing a transmission experiment underneath the Nb strip and comparing the results with a model based on diffusive transport, with some of the injected electrons being Andreev reflected into holes, we can estimate the quasiparticle decay length, ξqp≊50 nm, in the Nb-InAs superconducting quantum well. This decay length corresponds to an interface transparency of TSIN=0.5 between the Nb and InAs. The observed voltage dependence cannot entirely be understood within the presented model.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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