Superconductivity in amorphous Ta/Ge multilayers
H. J. Trodahl, H. L. Johnson, A. B. Kaiser, C. K. Subramaniam, B. J. Ruck, P. Lynam
DOI 10.1103/PhysRevB.53.15226 · Physical Review B
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Abstract
This paper reports measurements of the superconducting transition temperature (Tc) of Ta/Ge multilayers for a range of individual layer thicknesses. Thick amorphous Ta layers which are isolated by thick insulating (Ge) layers have a transition at 0.9 K, and it is noted that for thinner isolated layers Tc approaches zero as the resistance per square approaches the quantum resistance h/(2e)2. However, the transition temperature is enhanced in samples with thin Ge layers, and in films with Ta layers thinner than 1.5 nm Tc rises to near 3 K. The enhancement is consistent with a proximity effect involving layers of a Ta-Ge alloy at the layer boundary. © 1996 The American Physical Society.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Ta Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 0.9 | Pressure not reported | zero_resistance |
| Ta-Ge Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3 | Pressure not reported | zero_resistance |
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