Theory of Andreev reflection in a junction with a strongly disordered semiconductor
I. L. Aleiner, Penny Clarke, L. I. Glazman
DOI 10.1103/PhysRevB.53.R7630 · Physical Review B
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Abstract
We study the conduction of a normal-metal-semiconductor-superconductor junction, where the semiconductor is strongly disordered. The differential conductance dIdV of this structure is predicted to have a sharp peak at V=0. Unlike the case of a weakly disordered system, this feature persists even in the absence of an additional (Schottky) barrier on the boundary. The zero-bias conductance of such a junction is smaller only by a numerical factor than the conductance in the normal state GN. Implications for experiments on gated heterostructures with superconducting leads are discussed.
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