Strong temperature dependence of the c-axis gap parameter of Bi2Sr2CaCu2O8+δ intrinsic Josephson junctions
A. Yurgens, D. Winkler, N. V. Zavaritsky, T. Claeson
DOI 10.1103/PhysRevB.53.R8887 · Physical Review B
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Abstract
Stacked series arrays of intrinsic Josephson tunnel junctions have been fabricated on the surfaces of Bi2Sr2CaCu2O8+δ single crystals using photolithography and Ar-ion milling together with in situ monitoring of the resulting current-voltage (I−V) characteristics. The number of junctions in the stack (along the c axis) is varied from 1-5 to ∼200 in a controlled way. Both Josephson coupling and multiple branches with well developed gap features are seen in the I−V dependences of the arrays at T≲90 K. The gap parameter Δc is 10-13 meV at 4.2 K, which is approximately half the value reported in the literature. The temperature dependence of Δc deviates strongly from the BCS one. Proximity induced superconductivity of the Bi-O layers may possibly explain both the reduced gap parameter and its temperature dependence.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Bi2Sr2CaCu2O8+δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 90 | Pressure not reported | onset |
| Bi2Sr2CaCu2O8 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 90 | Pressure not reported | onset |
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