Doping and van Hove singularity dependence of Raman background in dx2−y2 superconductors

D. Branch; J. P. Carbotte

doi:10.1103/PhysRevB.54.13288

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Doping and van Hove singularity dependence of Raman background in dx2−y2 superconductors

D. Branch, J. P. Carbotte

DOI 10.1103/PhysRevB.54.13288 · Physical Review B

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Abstract

In a two-dimensional band-structure model, the effect of doping on the Raman electronic background of a superconductor with dx2−y2 gap symmetry is studied. Emphasis is placed near optimum doping and on the role of the van Hove singularity. The relationship between peaks in the Raman spectrum for three often discussed photon geometries and the gap is studied. No simple relationship exists, although the B1g mode can show many of the features of the quasiparticle density of states. © 1996 The American Physical Society.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
CuO2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	100	Pressure not reported	unknown