Positron annihilation in the epitaxial superconducting thin-film GdBa2Cu3O7−δ studied by using a pulsed positron beam
X. Y. Zhou, J. Störmer, R. L. Wang, J. Keimel, H. C. Li, G. Kögel, W. Triftshäuser
DOI 10.1103/PhysRevB.54.1398 · Physical Review B
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Abstract
The positron lifetime as a function of implantation energy was measured on the epitaxial superconducting thin film GdBa2Cu3O7−δ at different temperatures. The coexistence of both shallow and deep positron trapping centers was observed in the film. The shallow trapping centers include the screw dislocations and twin boundaries. The binding energy of the shallow trapping centers was estimated to be 56±12 meV. The deep trapping centers are assigned the cation vacancies, especially barium vacancies. On the surface of the sample there are macroscopic free volume holes in which positronium could be formed. © 1996 The American Physical Society.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| GdBa2Cu3O7-δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 91 | Pressure not reported | unknown |
| GdBa2Cu3O7 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 91 | Pressure not reported | unknown |
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