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Weak-localization, Aslamazov-Larkin, and Maki-Thompson superconducting fluctuation effects in disordered Zr1−xRhx films above Tc

M. Giannouri, E. Rocofyllou, C. Papastaikoudis, W. Schilling

DOI 10.1103/PhysRevB.56.6148 · Physical Review B

T1

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Abstract

The transverse magnetoresistance of disordered Zr1−xRhx thin films has been measured above the superconducting transition temperature Tc as a function of temperature in a magnetic field up to 60 kG. The investigated films are disordered enough to indicate quantum corrections due to localization and electron-electron interaction effects. The field and temperature dependence of the observed magnetoresistance is interpreted in terms of weak-localization, Aslamazov-Larkin, and Maki-Thompson superconducting fluctuations effects. From the comparison of the experimental results with theoretical calculations, the electron-electron attraction strength, β(T/Tc), is derived and is in good agreement with Larkin’s theory. The total phase- breaking rate τφ−1 has been estimated and ascribed to electron-phonon, electron-electron, electron-fluctuation, and spin-flip scattering mechanisms.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Zr75Rh25

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2.85Pressure not reportedunknown
Zr75Rh25

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2.76Pressure not reportedunknown
Zr75Rh25

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2.41Pressure not reportedunknown
Zr87Rh13

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3.39Pressure not reportedunknown
Zr87Rh13

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3.4Pressure not reportedunknown
Zr61Rh39

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1.3Pressure not reportedunknown
Zr61Rh39

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1.5Pressure not reportedunknown

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