Variation of the Josephson current with carrier concentration in the barrier
Francesco Tafuri
DOI 10.1103/PhysRevB.56.91 · Physical Review B
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Abstract
A phenomenological investigation of the dc Josephson current in superconductor– (S−) normal-metal– (N) [semiconductor– (Sm-)] superconductor junctions is carried out as a function of the carrier concentration in the barrier. The occurrence of a nonmonotonic dependence of the Josephson current on the carrier concentration is predicted within some limits. This study suggests that in S−N- (Sm-) S structures there is an optimum carrier concentration range which gives the maximum value of the Josephson current IC and the junction parameter ICRN.
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