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In-plane microwave conductivity of the single-layer cuprate Tl2Ba2CuO6+δ

D. M. Broun, D. C. Morgan, R. J. Ormeno, S. F. Lee, A. W. Tyler, A. P. Mackenzie, J. R. Waldram

DOI 10.1103/PhysRevB.56.R11443 · Physical Review B

T1

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Abstract

We have measured the in-plane microwave conductivity of nearly optimally doped single crystals (Tc=78 K) of Tl2Ba2CuO6+δ (Tl-2201) at 14.4, 24.8, and 35.9 GHz using cavity perturbation methods. At low temperatures, the in-plane penetration depth has a strong, linear temperature dependence, indicative of an unconventional pairing state with line nodes. The real part of the conductivity shows a broad, frequency-dependent peak near 30 K, similar to that seen in YBa2Cu3O7−δ and Bi2Sr2CaCu2O8 crystals. With tetragonal crystal symmetry and a single CuO2 plane per unit cell, Tl-2201 is the simplest structure so far to display these features.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Tl2Ba2CuO6+δ

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

78Pressure not reportedonset
YBa2Cu3O7-δ

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown
Bi2Sr2CaCu2O8

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown

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