Parity effect in superconducting islands with increasing lengths
J. G. Lu, J. M. Hergenrother, M. Tinkham
DOI 10.1103/PhysRevB.57.120 · Physical Review B
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Abstract
We explore island length effects in single-electron transistors with superconducting islands and normal-metal leads. It had been shown experimentally that the current versus gate-induced charge characteristics change from 2e periodicity to e periodicity above a temperature T* far below Tc. According to the equilibrium model of this parity effect proposed by Tuominen et al., T* depends inversely on the logarithm of the island volume, so T* should be depressed as the island length is increased. Our high-current-sensitivity data show that the depression of T* with increasing island length from 2 to 10 μm agrees well with the theoretical calculation of T*.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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