Experimental signature of phase-coherent Andreev reflection

K.-M. H. Lenssen; M. R. Leys; J. H. Wolter

doi:10.1103/PhysRevB.58.4888

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Experimental signature of phase-coherent Andreev reflection

K.-M. H. Lenssen, M. R. Leys, J. H. Wolter

DOI 10.1103/PhysRevB.58.4888 · Physical Review B

T1

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Abstract

We report experimental observation of a signature of phase-coherent Andreev reflection. In highly transmissive, superconducting contacts to the high mobility two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures, a sharp conductance dip is found around zero bias voltage, which is ascribed to an enhancement of weak localization by Andreev reflection. This phenomenon is suppressed not only by increased temperature, a small magnetic field, or a large bias current, but also by applying a large negative voltage to a nearby gate. This behavior is in agreement with recent theoretical predictions.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Sn Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	3.7	Pressure not reported	unknown