Resonant Josephson tunneling in S−I−S′-I-S multilayered devices

I. P. Nevirkovets; S. E. Shafranjuk

doi:10.1103/PhysRevB.59.1311

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Resonant Josephson tunneling in S−I−S′-I-S multilayered devices

I. P. Nevirkovets, S. E. Shafranjuk

DOI 10.1103/PhysRevB.59.1311 · Physical Review B

T1

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Abstract

It was observed experimentally that the magnitude of the Josephson current through a single junction in the double-barrier Nb/Al−AlOx−Nb/Al−AlOx−Nb stack is lower than that for the whole device. This effect is explained by a model that takes into account Andreev reflection in the S−I−S′-I-S double-barrier stack, where S and S′ are superconductors and I is an insulator. The middle S′ layer is very thin (with the thickness of order the coherence length) and has reduced superconducting parameters as compared with the external S layers. The model predicts bound state levels in the middle electrode. The bound states provide an additional channel of Josephson tunneling which results in enhanced Josephson critical current density through the stack as compared with that for the single S−I−S′ junction.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	8.5	Pressure not reported	unknown
Nb/Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	6.2	Pressure not reported	unknown